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Samsung continues to advance in the development of chips that substantially improve the performance, energy optimization and autonomy of its mobile terminals. In these terms, it has just announced that its engineers are in the process of developing a new three-nanometer chip, built from the 'Get-all-around' technology, which replaces the current FinFET crimping system. With this new chip built in three nanometers, we would be witnessing a true evolution, adapting to the new technologies of artificial intelligence and autonomous driving.
3-nanometer chips will use half the battery than current ones
If we compare the chip built in three nanometers with those we currently know manufactured in seven nanometers, it would reduce the size of the chip by up to 45%, 50% less power consumption and an increase in efficiency by 35%. The new technology 'Get-all-around' patented by Samsung uses a vertical nanosheet architecture (two-dimensional nanostructure with a thickness on a scale of 1 to 10 nanometers), allowing a greater electrical current per battery compared to the current FinFET process.
Last April, Samsung already shared with its customers the first development kit for this new chip, shortening its market launch and improving the competitiveness of its design. Right now, Samsung engineers are deep in the realm of improving performance and energy efficiency. If we cannot put batteries that last weeks, we will have to improve the processors.
In addition to the new chip built in three nanometers, Samsung plans to begin mass production of processors for devices, built in six nanometers, in the second half of this year. The FinFET process that manages to assemble five nanometers is expected to appear by the end of the year and its mass production is expected for the first half of next year. In addition, the company is also preparing for the development of the four-nanometer processors later this year. At what point will the long-awaited chips built in three nanometers appear? It is still too early to say.
